Determining the electronic performance limitations in top-down-fabricated Si nanowires with mean widths down to 4 nm.

نویسندگان

  • Muhammad M Mirza
  • Donald A MacLaren
  • Antonio Samarelli
  • Barry M Holmes
  • Haiping Zhou
  • Stephen Thoms
  • Douglas MacIntyre
  • Douglas J Paul
چکیده

Silicon nanowires have been patterned with mean widths down to 4 nm using top-down lithography and dry etching. Performance-limiting scattering processes have been measured directly which provide new insight into the electronic conduction mechanisms within the nanowires. Results demonstrate a transition from 3-dimensional (3D) to 2D and then 1D as the nanowire mean widths are reduced from 12 to 4 nm. The importance of high quality surface passivation is demonstrated by a lack of significant donor deactivation, resulting in neutral impurity scattering ultimately limiting the electronic performance. The results indicate the important parameters requiring optimization when fabricating nanowires with atomic dimensions.

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عنوان ژورنال:
  • Nano letters

دوره 14 11  شماره 

صفحات  -

تاریخ انتشار 2014